Photonic crystal laser lift-off GaN light-emitting diodes

Nanobeam photonic crystal cavity light-emitting diodes

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temp...

GaN microdisk light emitting diodes

Articles you may be interested in Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Appl. High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes

Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light- Emitting Diodes

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes

UNLABELLED The two-dimensional (2D) triangle lattice air hole photonic crystal (PC) GaN-based light-emitting diodes (LED) with double-layer graphene transparent electrodes (DGTE) have been produced. The current spreading effect of the double-layer graphene (GR) on the surface of the PC structure of the LED has been researched. Specially, we found that the part of the graphene suspending over th...

Photonic crystal light-emitting diodes fabricated by microsphere lithography.

Instead of using conventional electron lithography, a two-dimensional photonic crystal consisting of a hexagonal array of triangular air-holes was created on the surface of a GaN LED substrate using microsphere lithography. The microspheres self-assemble into a single-layered hexagonal-close-packed array acting as an etch mask. A significant enhancement in photoluminescence intensity was record...